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symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 40 c/w p-ch 56 62.5 c/w p-ch 81 110 c/w r jl p-ch 40 48 c/w absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel -30 gate-source voltage 20 12 i d 8.5 drain-source voltage 30 -3 a t a =70c 6.6 -2.4 pulsed drain current b 40 -6 continuous drain current a t a =25c power dissipation t a =25c p d 22 w t a =70c 1.28 1.28 junction and storage temperature range -55 to 150 -55 to 150 thermal characteristics: n-channel and p-channel parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state AO4609 complementary enhancement mode field effect transistor july 2003 features n-channel p-channel v ds (v) = 30v -30v i d = 8.5a -3a r ds(on) r ds(on) < 18m ? (v gs =10v) < 130m ? (v gs = 10v) < 28m ? (v gs =4.5v) < 180m ? (v gs = 4.5v) < 260m ? (v gs = 2.5v) general description the AO4609 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channel p -channel
AO4609 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 15.5 18 t j =125c 22.3 27 23 28 m ? g fs 23 s v sd 0.75 1 v i s 3a c iss 1040 pf c oss 180 pf c rss 110 pf r g 0.7 ? q g (10v) 19.2 nc q g (4.5v) 9.36 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 ns t r 4.4 ns t d(off) 17.3 ns t f 3.3 ns t rr 16.7 ns q rr 6.7 nc body diode reverse recovery time body diode reverse recovery charge i f =8.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ s n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =8.5a total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =8.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO4609 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.6 -1 -1.4 v i d(on) -10 a 102 130 t j =125c 154 200 128 180 m ? ? ? q g 4.4 nc q gs 0.8 nc q gd 1.32 nc t d(on) 5.3 ns t r 4.4 ns t d(off) 31.5 ns t f 8ns t rr 15.8 ns q rr 8nc body diode reverse recovery time body diode reverse recovery charge i f =-3a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-3a reverse transfer capacitance p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-2a i s =-1a,v gs =0v v ds =-5v, i d =-3a i f =-3a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-3a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO4609 n-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0.00e+00 4.00e+00 8.00e+00 1.20e+01 1.60e+01 2.00e+01 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 14 16 18 20 22 24 26 28 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c i d =8.5a alpha & omega semiconductor, ltd.
AO4609 n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ja .r ja r ja =62.5c/w t o n t o ff p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 alpha & omega semiconductor, ltd.
AO4609 p-channel typical electrical and thermal characteristics 0 5 10 15 20 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3.5v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 50 100 150 200 250 0123456 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-2.5v 0 50 100 150 200 250 300 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-2a -4v v gs =-2.5v v gs =-4.5v -2.0v -5v alpha & omega semiconductor, ltd.
AO4609 p-channel typical electrical and thermal characteristics 0 1 2 3 4 5 012345 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
q e q h l aaa b e1 c e d a a2 a1 symbols 0.050 bsc 0.50 1.27 8 0.10 0.10 5.00 6.20 4.00 0.51 0.25 --- 1.55 --- 5.80 0 0.25 0.40 --- --- --- --- --- 1.27 bsc 0.19 3.80 4.80 1.45 0.33 --- 0.00 --- --- --- --- 1.50 1.45 --- --- 0.228 0.010 0.016 --- 0 --- --- --- --- 0.057 0.007 0.013 --- 0.150 0.189 0.000 --- --- --- --- 0.059 0.057 --- 0.244 8 0.020 0.050 0.004 0.010 0.157 0.197 0.061 0.020 --- 0.004 dimensions in inches dimensions in millimeters max min nom min nom max so-8 package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.10 mm (4 mil) unless otherwise specified 3. coplanarity : 0.10 mm 4. dimension l is measured in gage plane recommended land pattern f a y w l c package marking description note: logo - aos logo 4609 - part number code. f - fab location a - assembly location y - year code w - week code. l c - assembly lot code so-8 part no. code logo 4 6 0 9 unit: mm alpha & omega semiconductor, inc. rev. a AO4609 part no. code 4609
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation alpha & omega semiconductor, inc.
so-8 package marking description alpha & omega semiconductor, ltd. AO4609 marking description version document no. title rev c pd-00064 note: logo - aos logo 4609 - part number code. f&a - foundry and assembly location y - year code w - week code. l t - assembly lot code code AO4609 4609 part no. description AO4609l standard product green product 4609 standard product green product
0.25 --- 0.10 a1 5.80 0 0.40 3.80 4.80 0.17 0.31 1.25 q d e l e e1 b c a2 --- 8 4.90 6.00 1.27 bsc --- 3.90 --- --- 5.00 6.20 1.27 4.00 0.51 0.25 1.65 dimensions in millimeters 1.35 min symbols a nom max 1.75 note 1. all dimensions are in millmeters. 2.dimensions are inclusive of plating. 3.package body sizes exclude mold flash and gate burrs. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter. converted inch dimensions are not necessarily exact. q gauge plane seating plane 0.50 0.25 h --- 1 8 1.65 1.50 0.059 0.065 --- 0.010 0.020 0.069 max nom min 0.053 dimensions in inches 0.065 0.010 0.020 0.157 0.050 0.244 0.197 --- --- 0.154 --- 0.050 bsc 0.236 0.193 8 --- 0.049 0.012 0.007 0.189 0.150 0.016 0 0.228 0.004 --- 0.010 unit: mm recommended land pattern
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation alpha & omega semiconductor, ltd.

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